The recent development
of optical technology has enabled the practical
use of a carrier-envelope phase-controlled monocycle electric field
in the terahertz (THz) regime. By combining this technique with metal
nanostructures such as nanotips, which induce near-field enhancement,
the development of novel applications is anticipated. In particular,
THz scanning tunneling microscopy (THz-STM) is a promising technique
for probing ultrafast dynamics with the spatial resolution of STM.
However, the modulation of the THz waveform is generally accompanied
by an enhancement of the electric field, which is unknown in actual
measurement environments. Here, we present a method enabling direct
evaluation of the enhanced near field in the tunnel junction in THz-STM
in the femtosecond range, which is essential for the use of the THz
near field. In the tunneling regime, it was also demonstrated that
the transient electronic state excited by an optical pulse can be
evaluated using the THz-STM, and the ultrafast carrier dynamics in
2H-MoTe2 excited by an optical pulse was reproducibly probed.