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Sub-20 nm Si/Ge Superlattice Nanowires by Metal-Assisted Etching

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journal contribution
posted on 09.09.2009, 00:00 by Nadine Geyer, Zhipeng Huang, Bodo Fuhrmann, Silko Grimm, Manfred Reiche, Trung-Kien Nguyen-Duc, Johannes de Boor, Hartmut S. Leipner, Peter Werner, Ulrich Gösele
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the substrate by anodic aluminum oxide masks, and finally metal-assisted chemical wet etching, this method generates highly ordered hexagonally patterned nanowires. This technique allows the fabrication of nanowires with a high area density of 1010 wires/cm2, including the control of their diameter and length.