Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles
journal contributionposted on 11.11.2020, 21:05 by G. C. Vásquez, M. E. Bathen, A. Galeckas, C. Bazioti, K. M. Johansen, D. Maestre, A. Cremades, Ø. Prytz, A. M. Moe, A. Yu. Kuznetsov, L. Vines
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting, and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 μm in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (VSi) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2–3% along the particle a-direction. Thus, embedding VSi qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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5 μ mself-assembled SiC nanoparticle matrixCL mapsfuture quantum technology devicesSiC MicroSi Vacancy Emissionemission shiftsparticle centerV Situne single-photon emission energiesStrain Modulation6 H-SiCNanoparticles Single-photonemission wavelengthembedding V Si qubit defectspoint defectsSi vacancyClear shiftstransmission electron microscopystrain analysisSiC nanoparticles100 nmdefect localizations