posted on 2024-01-04, 21:04authored byWeihao Zeng, Wei Shu, Jiawei Zhu, Fanjie Xia, Juan Wang, Weixi Tian, Jinsai Tian, Shaojie Zhang, Yixin Zhang, Haoyang Peng, Hongyu Zhao, Lei Chen, Jinsong Wu, Shichun Mu
Stacking
faults, as common native crystallographic planar defects,
have a significant negative impact on lithium (Li) ion diffision in
layered oxide cathode materials, which must be considered to design
and construct high-performance Li-ion batteries. Herein, we disclose
that the stacking fault is one of the important factors contributing
to the sluggish diffusion kinetics of Li-rich layered oxides (LLOs).
Multidimensional and multiscale structural analyses, combined with
theoretical calculations, reveal that the stacking fault in LLOs interrupts
the straight out-of-plane pathway and forces Li ions to take high-energy
barrier diffusion pathways. Furthermore, by reducing the defect density
of stacking faults in LLOs, the Li+ diffusion coefficient
is enhanced, facilitating the rate performance of Li-ion batteries.
Our results provide insight into comprehending the role of stacking
faults in layered cathode materials and demonstrate an available crystallographic
engineering route to improve the ionic diffusion capability.