American Chemical Society
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Stacking Fault Slows Down Ionic Transport Kinetics in Lithium-Rich Layered Oxides

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journal contribution
posted on 2024-01-04, 21:04 authored by Weihao Zeng, Wei Shu, Jiawei Zhu, Fanjie Xia, Juan Wang, Weixi Tian, Jinsai Tian, Shaojie Zhang, Yixin Zhang, Haoyang Peng, Hongyu Zhao, Lei Chen, Jinsong Wu, Shichun Mu
Stacking faults, as common native crystallographic planar defects, have a significant negative impact on lithium (Li) ion diffision in layered oxide cathode materials, which must be considered to design and construct high-performance Li-ion batteries. Herein, we disclose that the stacking fault is one of the important factors contributing to the sluggish diffusion kinetics of Li-rich layered oxides (LLOs). Multidimensional and multiscale structural analyses, combined with theoretical calculations, reveal that the stacking fault in LLOs interrupts the straight out-of-plane pathway and forces Li ions to take high-energy barrier diffusion pathways. Furthermore, by reducing the defect density of stacking faults in LLOs, the Li+ diffusion coefficient is enhanced, facilitating the rate performance of Li-ion batteries. Our results provide insight into comprehending the role of stacking faults in layered cathode materials and demonstrate an available crystallographic engineering route to improve the ionic diffusion capability.