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Stable Near-Infrared Light and Microcavity of the ZnTe Microbelt and Different Emission Behaviors
journal contributionposted on 2023-04-03, 13:06 authored by Yongbo Zhou, Ye Tian, Arfan Bukhtiar, Zhijie Zhou, Hualin Zhao, Wenchao Lin, Xianci Zhong, Bingsuo Zou
Among a II–VI semiconductor, ZnTe is an inherent p-type semiconductor and exhibits strong emissions within the visible range, which make it suitable for various optoelectronic applications. Here, we have obtained the ZnTe- and Fe-doped ZnTe microbelt by CVD growth. Near-infrared (NIR) luminescence from 600 to 1000 nm can be seen in the PL emission spectra of ZnTe microstructure excited by CW laser, along with the appearance of multimode peaks because of the optical microcavity. The NIR luminescence in ZnTe comes from the presence of Zn vacancies due to polymorphous transition of ZnTe in the vapor solid mechanism. The PL emission under femtosecond pulsed laser excitation produces a low-threshold laser line which is near the band edge of the ZnTe microbelt, which is quite different from the continuous wave excitation PL spectrum. The time of photon–matter interaction and the fast and slow coherent recombination of exciton and defect states determine their emission distribution. As the excitation pulse changes, the different optical behaviors generated by the semiconductor may be applied in many photonic devices. We also found that in addition to the two sides of the microbelt that form the FP cavity in the pure ZnTe microbelt, the interface in the doped ZnTe microbelt can also form the FP cavity together with one side of the microbelt; the presence of interface is due to the presence of impurities.
various optoelectronic applicationsvapor solid mechanismslow coherent recombinationmany photonic devicesexcitation pulse changesdefect states determinethreshold laser lineznte microstructure excitedzn vacancies duefp cavity togetherpl emission spectrapure znte microbeltdoped znte microbeltfp cavitypl emissionznte microbeltcw laserznte comesemission distributionvisible rangetype semiconductortwo sidessemiconductor mayquite differentpolymorphous transitionone sidemultimode peaksinherent pcvd growthband edgealso found1000 nm