Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors

Temperature has always been considered as an essential factor for almost all kinds of semiconductor-based electronic components. In this work, temperature-dependent synaptic plasticity behaviors, which are mimicked by the indium–gallium–zinc oxide thin-film transistors gated with sputtered SiO₂ electrolytes, have been studied. With the temperature increasing from 303 to 323 K, the electrolyte capacitance decreases from 0.42 to 0.11 μF cm^–2. The mobility increases from 1.4 to 3.7 cm² V^–1 s^–1, and the threshold voltage negatively shifts from −0.23 to −0.51 V. Synaptic behaviors under both a single pulse and multiple pulses are employed to study the temperature dependence. With the temperature increasing from 303 to 323 K, the post-synaptic current (PSC) at the resting state increases from 1.8 to 7.3 μA. Under a single gate pulse of 1 V and 1 s, the PSC signal altitude and the PSC retention time decrease from 2.0 to 0.7 μA and 5.1 × 10² to 2.5 ms, respectively. A physical model based on the electric field-induced ion drifting, ionic–electronic coupling, and gradient-coordinated ion diffusion is proposed to understand these temperature-dependent synaptic behaviors. Based on the experimental data on individual transistors, temperature-modulated pattern learning and memorizing behaviors are conceptually demonstrated. The in-depth investigation of the temperature dependence helps pave the way for further electrolyte-gated transistor-based neuromorphic applications.