Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells
journal contributionposted on 23.04.2014, 00:00 by Yuzhuan Xu, Jiangjian Shi, Songtao Lv, Lifeng Zhu, Juan Dong, Huijue Wu, Yin Xiao, Yanhong Luo, Shirong Wang, Dongmei Li, Xianggao Li, Qingbo Meng
A thin wide band gap organic semiconductor N,N,N′,N′-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal–semiconductor interface in the hole-conductor-free perovskite solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal–semiconductor interface.