posted on 2020-08-26, 19:07authored byKoichi Suematsu, Tokiharu Oyama, Wataru Mizukami, Yuki Hiroyama, Ken Watanabe, Kengo Shimanoe
Improvement of gas
selectivity, especially among volatile organic
compound (VOC) gases, was attempted by introducing pulse-driven modes
in semiconductor gas sensors. The SnO<sub>2</sub> microsensor was
fabricated on a miniature sensor device constructed with a microheater
and electrode. The gas-sensing properties were evaluated under a pulse-driven
mode by switching the heater on and off. According to density functional
theory calculations and temperature-programmed reaction measurements,
toluene molecule, which is one of the VOC gases, was adsorbed on the
SnO<sub>2</sub> surface by van der Waals forces. The conventional
sensor response, <i>S</i><sub>e</sub>, defined as the change
in the electrical resistance in air and target gas atmosphere, to
toluene was four and eight times greater than that to CO and H<sub>2</sub>, respectively. Moreover, the newly proposed sensor response, <i>S</i><sub>p</sub>, defined as the change in the electrical resistance
of the device in the target gas atmosphere during the heater-on period,
to toluene was 33 and 29 times greater than that to CO and H<sub>2</sub>, respectively. This significant difference in the <i>S</i><sub>p</sub> to toluene was caused by the combustion reaction of
condensed toluene within the sensing layer. Accordingly, the pulse-driven
mode of the semiconductor gas sensor can be exploited to improve the
gas selectivity of VOC gases based on these newly defined sensor response
measures.