posted on 2022-06-16, 13:36authored byJun Deng, Jinbo Pan, Yanfang Zhang, Yuhui Li, Wenhan Dong, Jiatao Sun, Shixuan Du
Bipolar
magnetic semiconductors (BMSs) show great promise in spintronic
devices because of their spin-dependent transport properties. Two-dimensional
(2D) BMSs with electrically controllable spin polarization are ideal
materials for bipolar manipulating the spin orientations at the nanoscale.
Here, we systematically screened 2D BMSs from the 2DMatPedia database
and found 11 promising candidates from 6531 structures. We attribute
the formation of BMS electronic structure to the strong crystal field
effect and low spin-exchange splitting in these structures. Moreover,
we proposed an alternative way to construct BMS via engineering of
heterostructures. The unique electronic structures of BMS can be achieved
by stacking two half semiconductors with interlayer antiferromagnetic
coupling and type-II band alignment. This approach was verified in
CrI3/VI3 and CrSCl/CrSBr bilayer systems. Our
work not only provides potential candidates of BMSs but also gives
insight into the formation mechanism of BMSs, which will stimulate
the experimental synthesis and application of BMSs.