posted on 2022-10-22, 00:05authored byVanessa
M. Koch, Jaroslav Charvot, Yuanyuan Cao, Claudia Hartmann, Regan G. Wilks, Ivan Kundrata, Ignacio Mínguez-Bacho, Negar Gheshlaghi, Felix Hoga, Tobias Stubhan, Wiebke Alex, Daniel Pokorný, Ece Topraksal, Ana-Sunčana Smith, Christoph J. Brabec, Marcus Bär, Dirk M. Guldi, Maïssa
K. S. Barr, Filip Bureš, Julien Bachmann
We establish solution atomic layer deposition (sALD)
for the controlled
growth of pure Sb2Se3 thin films under mild
conditions, namely, room temperature and atmospheric pressure. Upscaling
this process yields Sb2Se3 thin films with high
homogeneity over large-area (4″) substrates. Annealing of the
initially amorphous material leads to highly crystalline and smooth
Sb2Se3 thin films. Removing the constraints
of thermal stability and sufficient volatility in sALD compared to
traditional gas-phase ALD opens up a broad choice of precursors and
allows us to examine a wide range of Se2– precursors,
of which some exhibit facile synthetic routes and allow us to tune
their reactivity for optimal experimental ease of use. Moreover, we
demonstrate that the solvent used in sALD represents an additional,
attractive tool to influence and tailor the reactivity at the liquid–solid
interface between the precursors and the surface.