posted on 2018-02-22, 00:00authored byV. X. Ho, T. M. Al tahtamouni, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh
Large-scale
optoelectronics integration is strongly limited by
the lack of efficient light sources, which could be integrated with
the silicon complementary metal-oxide-semiconductor (CMOS) technology.
Persistent efforts continue to achieve efficient light emission from
silicon in extending the silicon technology into fully integrated
optoelectronic circuits. Here, we report the realization of room-temperature
stimulated emission in the technologically crucial 1.5 μm wavelength
range from Er-doped GaN multiple-quantum wells on silicon and sapphire.
Employing the well-acknowledged variable stripe technique, we have
demonstrated an optical gain up to 170 cm–1 in the
multiple-quantum well structures. The observation of the stimulated
emission is accompanied by the characteristic threshold behavior of
emission intensity as a function of pump fluence, spectral line width
narrowing, and excitation length. The demonstration of room-temperature
lasing at the minimum loss window of optical fibers and in the eye-safe
wavelength region of 1.5 μm are highly sought after for use
in many applications including defense, industrial processing, communication,
medicine, spectroscopy, and imaging. As the synthesis of Er-doped
GaN epitaxial layers on silicon and sapphire has been successfully
demonstrated, the results laid the foundation for achieving hybrid
GaN-Si lasers, providing a new pathway toward full photonic integration
for silicon optoelectronics.