cm7b01816_si_001.pdf (860.96 kB)
Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride
journal contribution
posted on 2017-06-27, 00:00 authored by Aaron Dangerfield, Charith E. Nanayakkara, Anupama Mallikarjunan, Xinjian Lei, Ronald M. Pearlstein, Agnes Derecskei-Kovacs, Jeremy Cure, Alain Estève, Yves J. ChabalAminosilanes
are attractive precursors for atomic layer deposition
of silicon oxides and nitrides because they are halide-free and more
reactive than chlorosilanes. However, the deposition of silicon nitride
on oxide substrates still requires relatively high temperatures. We
show here that for a process involving disec-butylaminosilane
and hydrazine, the insertion of Al from trimethyl aluminum allows
the deposition of silicon nitride films at relatively low temperatures
(250 °C). First-principles calculations reveal that the presence
of Al increases the binding of molecular hydrazine, thereby effectively
enhancing the reactivity of hydrazine with the silicon precursor during
the atomic layer deposition process, which leads to nitrogen incorporation
into silicon. However, the range of this enhancement is limited to ∼1
nm, requiring additional trimethylaluminum exposures to continue the
Si3N4 deposition.
History
Usage metrics
Categories
Keywords
silicon precursorhydrazineSilicon Nitride AminosilanesAl increasessilicon oxideslayer deposition processlayer depositiondi secoxide substratesSi 3 N 4 depositionsilicon nitride filmsFirst-principles calculationstrimethylaluminum exposuresnitrogen incorporationsilicon nitrideLow Temperature Atomic Layer Depositiontrimethyl aluminum
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC