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Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

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journal contribution
posted on 10.06.2015, 00:00 by Sang Han Park, Jimin Chae, Kwang Sik Jeong, Tae-Hyeon Kim, Hyejin Choi, Mann-Ho Cho, Inwoong Hwang, Myung-Ho Bae, Chul Kang
For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.