Remote Doping of Scalable Nanowire Branches
journal contributionposted on 27.04.2020, 15:36 by Martin Friedl, Kris Cerveny, Chunyi Huang, Didem Dede, Mohammad Samani, Megan O. Hill, Nicholas Morgan, Wonjong Kim, Lucas Güniat, Jaime Segura-Ruiz, Lincoln J. Lauhon, Dominik M. Zumbühl, Anna Fontcuberta i Morral
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localizationa signature of strong spin–orbit interactionacross a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.
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remote-doping strategyRemote Dopingultrafast photodetection schemesquantum technologiesInGaAs nanowire networksScalable Nanowire Branches Selective-area epitaxynanowire networkscrystal qualitytopological quantumdonorscalable nanowire networksnanowire Y-junctioncarrier densityLow-temperature magnetotransport measurements