ae7b00130_si_001.pdf (123.86 kB)
Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization
journal contribution
posted on 2018-04-27, 00:00 authored by Ziheng Liu, Xiaojing Hao, Jialiang Huang, Anita Ho-Baillie, Martin A. GreenWe have developed
a cost-effective, up-scalable, and high-throughput method combining
continuous-wave (CW) diode laser and magnetron sputtering for fabricating
low-defect single-crystalline Ge films for high-efficiency III–V
solar cell applications. CW diode laser-induced recrystallization
is demonstrated to dramatically reduce the threading dislocation density
(TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films
by more than 3 orders of magnitude. This might be due to the change
of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering
process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization
process, overcoming the typical issue of Ge/Si lattice mismatch to
achieve low TDD.