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Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

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journal contribution
posted on 16.09.2020, 11:45 by Anas Elbaz, Riazul Arefin, Emilie Sakat, Binbin Wang, Etienne Herth, Gilles Patriarche, Antonino Foti, Razvigor Ossikovski, Sebastien Sauvage, Xavier Checoury, Konstantinos Pantzas, Isabelle Sagnes, Jérémie Chrétien, Lara Casiez, Mathieu Bertrand, Vincent Calvo, Nicolas Pauc, Alexei Chelnokov, Philippe Boucaud, Frederic Boeuf, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work, we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7% to 10.5%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4–8 μm range. We evidence a direct band gap in GeSn with 7% of Sn and lasing at 2–2.3 μm wavelength under optical injection with reproducible lasing thresholds around 10 kW cm–2, lower by 1 order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.