Reduced Contact Resistance in Inkjet Printed High-Performance Amorphous Indium Gallium Zinc Oxide Transistors
journal contributionposted on 21.02.2016, 16:17 by Jonathan W. Hennek, Yu Xia, Ken Everaerts, Mark C. Hersam, Antonio Facchetti, Tobin J. Marks
Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized “ink” and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm2 V–1 s–1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices.