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Radical Rearrangements for the Chemical Vapor Deposition of Diamond

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journal contribution
posted on 12.06.1998, 00:00 by Andreas M. Mueller, Peter Chen
A combination of chemical trapping and computations is used to determine the activation parameters for the interconversion of the 3-methylenebicyclo[3.3.1]nonan-7-yl (1), (3-noradamantyl)methyl (2), and 1-adamantyl (3) radicals. The three radicals model proposed intermediate surface radical structures in the chemical vapor deposition (CVD) of diamond on its 2 × 1 reconstructed [100] surface. The study finds that relatively low-level calculations previously applied to the problem of diamond growth are reliable, at least qualitatively.