In
space applications, electronics must function while being strongly
radiated. In this work, the radiation hardness property of the planar
two-terminal nanoscale air channel device (NACD), which is a device
of vacuum electronics, was demonstrated. Specifically, the total ionizing
dose (TID) effect and single-event effects (SEEs) on the NACD were
investigated. X-ray and pulse laser were utilized as the sources of
TID radiation and SEE radiation, respectively. No significant degradation
was observed after 1 Mrad(Si) X-ray radiation, and no single-event
transient phenomenon was detected at the pulse laser energy up to
5 nJ. Additionally, the physical mechanism of radiation hardness in
the NACD was illustrated by theoretical analysis and finite element
simulation. Taken together, the proposed work shows that the radiation
hardness property of the NACD may have a prospect in deep space and
nuclear energy applications.