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Quantum Oscillation and Electronic Structure of Sn4As3 and Sn4P3

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journal contribution
posted on 2023-02-17, 17:37 authored by Qi Liu, Peng-Jie Guo, Sheng Xu, Xiao-Yu Yue, Huan Wang, Xiao-Yan Wang, Hui Liang, Dan-Dan Wu, Yan Sun, Qiu-Ju Li, Tian-Long Xia, Xue-Feng Sun, Yi-Yan Wang
We report the magnetotransport properties and electronic structures of the single crystals of Sn4As3 and Sn4P3. The magnetization curves display strong de Haas–van Alphen oscillations at low temperatures and high magnetic fields. The oscillation frequencies and corresponding Fermi surfaces (FSs) are identified from the analysis of the oscillations. The in-plane magnetization of Sn4As3 shows the split of FSs induced by nonsymmetric spin–orbit interaction. The extracted cyclotron effective masses are very small and in the range 0.03–0.11 me. First-principles calculations reveal the electronic structures and topological properties. Large transverse magnetoresistance (MR) has also been observed in Sn4As3 and Sn4P3. The Hall measurements eliminate the possibility of electron–hole compensation. It is suggested that the large MR mainly originates from the open FSs.

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