posted on 2013-11-13, 00:00authored byHouk Jang, Wonho Lee, Sang M. Won, Seoung
Yoon Ryu, Donghun Lee, Jae Bon Koo, Seong-Deok Ahn, Cheol-Woong Yang, Moon-Ho Jo, Jeong Ho Cho, John A Rogers, Jong-Hyun Ahn
Two dimensional (2D) semiconductors
have attracted attention for
a range of electronic applications, such as transparent, flexible
field effect transistors and sensors owing to their good optical transparency
and mechanical flexibility. Efforts to exploit 2D semiconductors in
electronics are hampered, however, by the lack of efficient methods
for their synthesis at levels of quality, uniformity, and reliability
needed for practical applications. Here, as an alternative 2D semiconductor,
we study single crystal Si nanomembranes (NMs), formed in large area
sheets with precisely defined thicknesses ranging from 1.4 to 10 nm.
These Si NMs exhibit electronic properties of two-dimensional quantum
wells and offer exceptionally high optical transparency and low flexural
rigidity. Deterministic assembly techniques allow integration of these
materials into unusual device architectures, including field effect
transistors with total thicknesses of less than 12 nm, for potential
use in transparent, flexible, and stretchable forms of electronics.