Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures
journal contributionposted on 10.09.2014, 00:00 by Jan Müßener, Jörg Teubert, Pascal Hille, Markus Schäfer, Jörg Schörmann, Maria de la Mata, Jordi Arbiol, Martin Eickhoff
We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.