Pressure-Induced Enhancement of Thermoelectric Performance in Rubrene

In this work, the thermoelectric performance of a typical small-molecule organic semiconductor rubrene under different hydrostatic pressures was studied by first-principles calculation and molecular dynamics simulation. The ZT value of rubrene can reach 1.6 at 400 K due to an unprecedented increase in hole mobility under hydrostatic pressure. The underlying mechanism is ascribed to the suppression of low-frequency phonons (which weakens electron–phonon scattering) and the increase in the intermolecular electronic coupling. The effect of uniaxial stress has also been investigated to confirm this conclusion. Our results provide meaningful insights to understand the relationship between thermoelectric properties and hydrostatic pressure in organic semiconductors.