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Preparation of (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) Photocatalysts from the Reaction of NH<sub>3</sub> with Ga<sub>2</sub>O<sub>3</sub>/ZnO and ZnGa<sub>2</sub>O<sub>4</sub>: In Situ Time-Resolved XRD and XAFS Studies

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journal contribution
posted on 2009-03-05, 00:00 authored by Haiyan Chen, Wen Wen, Qi Wang, Jonathan C. Hanson, James T. Muckerman, Etsuko Fujita, Anatoly I. Frenkel, José A. Rodriguez
Gallium zinc oxynitrides (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) are important due to their visible-light photocatalytic activity. Using in situ time-resolved X-ray diffraction (XRD), we have monitored the formation of wurtzite (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) compounds during the solid-state reaction of NH<sub>3</sub> with Ga<sub>2</sub>O<sub>3</sub>/ZnO mixtures or a ZnGa<sub>2</sub>O<sub>4</sub> spinel. The ZnGa<sub>2</sub>O<sub>4</sub> spinel was found to be a key intermediate in the formation of (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) and imposes a limit on the zinc content in the gallium zinc oxynitrides. Furthermore, after its formation, a wurtzite (Ga<sub>2/3</sub>Zn<sub>1/3</sub>)(N<sub>2/3</sub>O<sub>1/3</sub>) phase evolves to (Ga<sub>0.9</sub>Zn<sub>0.1</sub>)(N<sub>0.9</sub>O<sub>0.1</sub>) with increasing nitridation reaction time as a result of the removal of Zn and O atoms from the system. Once (Ga<sub>2/3</sub>Zn<sub>1/3</sub>)(N<sub>2/3</sub>O<sub>1/3</sub>) is formed, one must minimize exposure of the compound to NH<sub>3</sub>. Zinc and gallium K-edge X-ray absorption fine structure (XAFS) data revealed that the local structures around gallium and zinc atoms in the (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) systems are similar to those of GaN and ZnO, respectively, with relatively minor distortions in the Ga−N and Zn−O bond lengths. The Zn−O/N bonds prefer to align along the <i>c</i>-axis of the lattice, in agreement with the findings of DFT calculations reported in the literature. The corresponding Zn K-edge XANES spectra of (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) display a position red-shifted toward lower energies by ∼ 0.5 eV with respect to that of ZnO, indicating a lower oxidation state of Zn in (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>). N K-edge NEXAFS data show that the bonding geometry and electronic properties of the nitrogen atoms in (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) are similar to those in GaN. However, the O K-edge spectra exhibit a pre-edge feature not seen for ZnO or Ga<sub>2</sub>O<sub>3</sub>. This unique property of the oxygen atoms in (Ga<sub>1−<i>x</i></sub>Zn<sub><i>x</i></sub>)(N<sub>1−<i>x</i></sub>O<sub><i>x</i></sub>) may be related to the existence of holes and affect visible light absorption and surface chemistry.

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