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Postfabrication Annealing Effects on Insulator–Metal Transitions in VO2 Thin-Film Devices

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journal contribution
posted on 26.11.2014, 00:00 by Servin Rathi, In-yeal Lee, Jin-Hyung Park, Bong-Jun Kim, Hyun-Tak Kim, Gil-Ho Kim
In order to investigate the metal–insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator–metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.