Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers
journal contributionposted on 10.09.2019, 18:41 authored by Hyoju Kim, Jong Sung Moon, Gichang Noh, Jieun Lee, Je-Hyung Kim
Future scalable and integrated quantum photonic systems require deterministic generation and control of multiple quantum emitters. Although various approaches for spatial and spectral control of the quantum emitters have been developed, on-chip control of both position and frequency is still a long-standing goal in solid-state quantum emitters. Here, we demonstrate simultaneous control of position and frequency of the quantum emitters from transition metal dichalcogenide monolayers. Atomically thin two-dimensional materials are inherently sensitive to external strain and offer a new opportunity of creating and controlling the quantum emitters by engineering strain. We fabricate an electrostatically actuated microcantilever with nanopyramid patterns, providing a local strain engineering platform for the WSe2 monolayer. The integrated WSe2 generates high-purity single photon emission at patterned positions with a tuning range up to 3.5 meV. Together with the position and frequency control, we investigate the strain response on the fine-structure splitting and confirm 11% reduction in the fine splitting at the estimated tensile strain of 0.07%.