Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors
journal contributionposted on 27.12.2017, 00:00 authored by Kyung-Chul Ok, Jun-Hyung Lim, Hyun-Jun Jeong, Hyun-Mo Lee, You Seung Rim, Jin-Seong Park
Photochemical reactions in inorganic films, which can be promoted by the addition of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy, even at low temperatures. We performed thermal-induced, deep ultraviolet-based, thermal–photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar variations in the nanostructures with phase transformation and densification. The separated Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was stabilized remarkably by the reduction of oxygen defects and by the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm2 V–1 s–1.
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Photothermally Activated Nanocrystalline Oxynitrideoxygen defectsZnO x N yFlexible Field-Effect Transistors Photochemical reactionsMetaphase filmspolyethylene naphthalate filmsnanocrystalline-ZnO x N y thin-film transistorsSuperior Performancesaturation mobilityZnO nanocrystalline latticeZn 3 N 2phase transformationmetaphase ZnO x N y films