posted on 2021-11-16, 17:17authored byXin Geng, Xiaolong Liu, Lalani Mawella-Vithanage, Chathuranga C. Hewa-Rahinduwage, Liang Zhang, Stephanie L. Brock, Ting Tan, Long Luo
Slow
response and recovery kinetics is a major challenge for practical
room-temperature NO<sub>2</sub> gas sensing. Here, we report the use
of visible light illumination to significantly shorten the response
and recovery times of a PbSe quantum dot (QD) gel sensor by 21% (to
27 s) and 63% (to 102 s), respectively. When combined with its high
response (0.04%/ppb) and ultralow limit of detection (3 ppb), the
reduction in response and recovery time makes the PbSe QD gel sensor
among the best p-type room-temperature NO<sub>2</sub> sensors reported
to date. A combined experimental and theoretical investigation reveals
that the accelerated response and recovery time is primarily due to
photoexcitation of NO<sub>2</sub> gaseous molecules and adsorbed NO<sub>2</sub> on the gel surface, rather than the excitation of the semiconductor
sensing material, as suggested by the currently prevailing light-activated
gas-sensing theory. Furthermore, we find that the extent of improvement
attained in the recovery speed also depends on the distribution of
excited electrons in the adsorbed NO<sub>2</sub>/QD gel system. This
work suggests that the design of light-activated sensor platforms
may benefit from a careful assessment of the photophysics of the analyte
in the gas phase and when adsorbed onto the semiconductor surface.