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Photoexcited NO<sub>2</sub> Enables Accelerated Response and Recovery Kinetics in Light-Activated NO<sub>2</sub> Gas Sensing

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journal contribution
posted on 2021-11-16, 17:17 authored by Xin Geng, Xiaolong Liu, Lalani Mawella-Vithanage, Chathuranga C. Hewa-Rahinduwage, Liang Zhang, Stephanie L. Brock, Ting Tan, Long Luo
Slow response and recovery kinetics is a major challenge for practical room-temperature NO<sub>2</sub> gas sensing. Here, we report the use of visible light illumination to significantly shorten the response and recovery times of a PbSe quantum dot (QD) gel sensor by 21% (to 27 s) and 63% (to 102 s), respectively. When combined with its high response (0.04%/ppb) and ultralow limit of detection (3 ppb), the reduction in response and recovery time makes the PbSe QD gel sensor among the best p-type room-temperature NO<sub>2</sub> sensors reported to date. A combined experimental and theoretical investigation reveals that the accelerated response and recovery time is primarily due to photoexcitation of NO<sub>2</sub> gaseous molecules and adsorbed NO<sub>2</sub> on the gel surface, rather than the excitation of the semiconductor sensing material, as suggested by the currently prevailing light-activated gas-sensing theory. Furthermore, we find that the extent of improvement attained in the recovery speed also depends on the distribution of excited electrons in the adsorbed NO<sub>2</sub>/QD gel system. This work suggests that the design of light-activated sensor platforms may benefit from a careful assessment of the photophysics of the analyte in the gas phase and when adsorbed onto the semiconductor surface.

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