posted on 2020-10-07, 18:41authored byQingyan Li, Tengteng Li, Yating Zhang, Zhiliang Chen, Yifan Li, Lufan Jin, Hongliang Zhao, Jie Li, Jianquan Yao
Photoerasable
memories based on the organic field-effect transistor
(OFET) have aroused great interest due to the advantages and potential
applications, such as the erasure of confidential information. However,
the complex manufacturing process of OFET memories is not conducive
to large-scale production and market applications in the future. In
this paper, the photoerasable memories are prepared by a simple solution
process to disperse [6,6]-phenyl-C61-butyric acid methyl
ester (PCBM) in poly(methyl methacrylate) (PMMA) thin films as a hybrid
floating gate layer. The OFET memory devices present fast electrical
programmable and photoerasable characteristics on the basis of matching
energy band structure. With an optimal blending ratio of PCBM/PMMA,
the memories present a long data retention time of 12 000 s
during retention tests and a stable on/off drain-source current (IDS) switching behavior over 800 cycles during
repeated erasing–reading–programming–reading
(ERPR) cycling tests. A 2-bit storage capability is also obtained
in the memories by trapping different numbers of holes. These characteristics
of easy-to-manufacture and photoerasable memories are expected to
open up new areas in the field of information storage.