posted on 2020-06-18, 17:06authored byKidong Park, Minkyung Jung, Doyeon Kim, Janice Ruth Bayogan, Jong Hyun Lee, Sung Jin An, Jungpil Seo, Jaemin Seo, Jae-Pyoung Ahn, Jeunghee Park
The bottom-up synthesis
process often allows the growth of metastable
phase nanowires instead of the thermodynamically stable phase. Herein,
we synthesized Cd3As2 nanowires with a controlled
three-dimensional Dirac semimetal phase using a chemical vapor transport
method. Three different phases such as the body centered tetragonal
(bct), and two metastable primitive tetragonal (P42/nbc and P42/nmc) phases were identified. The conversion between
three phases (bct → P42/nbc → P42/nmc) was achieved by increasing the growth temperature. The growth direction
is [110] for bct and P42/nbc and [100] for P42/nmc, corresponding to the same crystallographic
axis. Field effect transistors and photodetector devices showed the
nearly same electrical and photoelectrical properties for three phases.
Differential conductance measurement confirms excellent electron mobility
(2 × 104 cm2/(V s) at 10 K). Negative photoconductance
was first observed, and the photoresponsivity reached 3 × 104 A/W, which is ascribed to the surface defects acting as trap
sites for the photogenerated electrons.