Phase-Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Phase-change memory is an emerging type of nonvolatile memory that shows a strong presence in the data-storage market. This technology has also recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase-change materials in crossbar architectures and their compatibility with industrial nanofabrication processes. In this work, we have developed crossbar phase-change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in nanofabricated TiN crossbar arrays using a scalable process. Various characterization techniques, such as atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray (EDX) were used to study electrodeposited materials in these arrays. Phase-switching tests of electrodeposited materials have shown a resistance switching ratio of 2 orders of magnitude with an endurance of around 80 cycles. Demonstrating crossbar phase-change memories via electrodeposition paves the way toward using this technique for developing scalable memory arrays involving electrodeposited materials for passive selectors and phase-switching devices.