Persistent Ion Accumulation at Interfaces Improves the Performance of Perovskite Solar Cells

The mixed ionic–electronic nature of lead halide perovskites makes their performance in solar cells complex in nature. Ion migration is often associated with negative impactssuch as hysteresis or device degradationleading to significant efforts to suppress ionic movement in perovskite solar cells. In this work, we demonstrate that ion trapping at the perovskite/electron transport layer interface induces band bending, thus increasing the built-in potential and open-circuit voltage of the device. Quantum chemical calculations reveal that iodine interstitials are stabilized at that interface, effectively trapping them at a remarkably high density of ∼10²¹ cm^–3 which causes the band bending. Despite the presence of this high density of ionic defects, the electronic structure calculations show no sub-band-gap states (electronic traps) are formed due to a pronounced perovskite lattice reorganization. Our work demonstrates that ionic traps can have a positive impact on device performance of perovskite solar cells.