posted on 2021-07-20, 15:15authored byMengqi Cui, Na Li, Yuying Wang, Yuting Li, Xia Tian, Xingchen Zhang, Wenting Wang, Zhongmin Liu, Qikun Rong, Xingsen Gao, Guofu Zhou, Li Nian
In
this study, an effective and simple approach for optimizing
the performance of both cathode and anode interlayers in OSCs is demonstrated
using 4-heptyl-4′-cyanobiphenyl (7CB) to dope a classic cathode
(ZnO and SnO2) or an anode interlayer [poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
(PEDOT:PSS)]. Because of the enhanced light absorption, improved physical
contact between a photoactive layer and an interlayer, and increased
carrier recombination, all of the devices based on a 7CB-doped interlayer
show increased short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE)
compared to the corresponding undoped interlayer, regardless it is
the anode interlayer or the cathode interlayer, which is a rare phenomenon
in the interlayer modification field.