posted on 2021-02-02, 22:13authored byXinhua Wang, Yange Zhang, Sen Huang, Haibo Yin, Jie Fan, Ke Wei, Yingkui Zheng, Wenwu Wang, Haojie Jiang, Xuebang Wu, Xianping Wang, Changsong Liu, Xinyu Liu
The
formation mechanism of the partially crystallized ultrathin
layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based
on the chemical components of reactants and products detected by high-resolution
sputter depth profile analysis by X-ray photoelectron spectroscopy.
A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the
Gibbs free energy changes of the reaction. The high-energy-activated
Ga2O on the surface likely assists in the synthesis of
the crystallized components. A well-defined 1ML θ-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated
state of the bonds. Low-density states can be achieved when the effective
charges of the unsaturated atoms are adjusted to a certain interval.