posted on 2024-02-26, 11:03authored byJiaming Fan, Jiang Feng, Yu Gao, Zijian Zhang, Song Xue, Gangri Cai, Jin Shi Zhao
Synapses and neurons in artificial intelligence are acknowledged
as pivotal elements in constructing neuromorphic computing systems.
Specifically, organic material-based memristors are widely recognized
due to their advantages in terms of transparency, flexibility, cost-effectiveness,
environment friendliness, and biocompatible properties. In this paper,
we fabricated organic functional layer-based memristors and synapses
by spin-coating poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)
(PEDOT:PSS) onto an indium tin oxide (ITO) substrate following a magnetron-sputtered
ITO as the top electrode. Moreover, zinc oxide nanoparticles (ZnO
NPs) were employed in the functional layer as charge trapping elements
for optimizing the performance of PEDOT-based memory devices. With
control of the concentrations of ZnO NPs, the devices of ITO/PEDOT:PSS(ZnO
NPs)/ITO exhibited promising resistive switching performance and synaptic
functionalities. In the device of ITO/PEDOT:PSS(3% ZnO NPs)/ITO, it
shows gradual switching characteristics and could effectively mimic
synapse functionalities. In the device ITO/PEDOT:PSS(5% ZnO NPs)/ITO,
it shows a forming-free character and excellent resistive change performance.