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Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films
journal contributionposted on 2023-05-15, 12:05 authored by Xiangyu Guo, Qi Han, Jun Wang, Shuangshuang Tian, Rongxu Bai, Haibin Zhao, Xingli Zou, Xionggang Lu, Qingqing Sun, David W. Zhang, Shen Hu, Li Ji
We report the large-scale transfer process for monocrystalline CsPbBr3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm2 V–1 s–1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.
thin films preparedthin films couldphysical fabrication processesexcellent optical propertieselectronically flat interfaceseffectively avoid chemicalchemical vapor depositionoptoelectronic applications based3 subscale transfer process2 suptransfer processoptoelectronic devicesseamless contactscale transferredquality singlephotonic laserperovskite surfacemonocrystalline perovskiteslow defectshole mobilitycrystal perovskiteatomically clean61 μj