Version 2 2015-12-17, 10:44Version 2 2015-12-17, 10:44
Version 1 2015-11-11, 11:58Version 1 2015-11-11, 11:58
journal contribution
posted on 2015-12-17, 10:44authored byLaxman Gouda, Ronen Gottesman, Adam Ginsburg, David A. Keller, Eynav Haltzi, Jiangang Hu, Shay Tirosh, Assaf Y. Anderson, Arie Zaban, Pablo P. Boix
The
high open-circuit potential (Voc) achieved
by perovskite solar cells (PSCs) is one of the keys to
their success. The Voc analysis is essential
to understand their working mechanisms. A large number of CH3NH3PbI3–xClx PSCs were fabricated on single large-area substrates
and their Voc dependencies on illumination
intensity, I0, were measured showing three
distinctive regions. Similar results obtained in Al2O3 based PSCs relate the effect to the compact TiO2 rather than the mesoporous oxide. We propose that two working mechanisms
control the Voc in PSCs. The rise of Voc at low I0 is
determined by the employed semiconductor n-type contact (TiO2 or MgO coated TiO2). In contrast, at I0 close to AM1.5G, the employed oxide does not affect
the achieved voltage. Thus, a change of regime from an oxide-dominated EFn (as in the dye sensitized solar cells) to
an EFn, directly determined by the CH3NH3PbI3–xClx absorber is suggested.