Version 2 2023-11-06, 14:37Version 2 2023-11-06, 14:37
Version 1 2023-11-03, 17:12Version 1 2023-11-03, 17:12
journal contribution
posted on 2023-11-06, 14:37authored byNikita Mitiushev, Eugene Kabachkov, Kirill Laptinskiy, Anatoly Firsov, Gennady Panin, Andrei Baranov
The possibility of chemical modification of a graphene
oxide film
deposited on a Si/SiO2 substrate during a one-stage hydrothermal
process in the presence of fluorine ions and reducing agents, such
as ascorbic acid or hydrazine, is shown. The proposed technique makes
it possible to obtain reduced fluorinated graphene nitride oxide (RGOFN)
in the form of a thin film with a controlled composition of functional
groups by changing the type and concentration of the reducing agent
and then transferring the obtained films to any substrate. XPS and
IR spectroscopy of the obtained films revealed controlled changes
in the structure and composition of graphene oxide associated with
the removal of oxygen groups and the incorporation of fluorine ions
as well as the reduction of conjugated double bonds and the controlled
incorporation of nitrogen into thin RGOFN films. The current–voltage
characteristics of the fabricated RGOFN structures showed that their
electrical properties are well controlled by doping with nitrogen
during the proposed one-stage process.