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One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices

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posted on 2023-02-22, 16:06 authored by Haobing Zhao, Hailong Hu, Jinping Zheng, Yuan Qie, Kuibao Yu, Yangbin Zhu, Zhiqi Luo, Lihua Lin, Kaiyu Yang, Tailiang Guo, Fushan Li
With tunable emission in the full visible region, the ecofriendly InP quantum dots (QDs) show unique application prospects in light-emitting devices. At present, InP QDs suffer from wide-bandwidth emission, especially for electroluminescence (EL), which hinders their applications in high-performance display devices. Here, we report a facile one-pot synthesis of narrow-bandwidth InP/ZnSeS/ZnS QDs using a safe phosphorus source of tris(dimethylamino)phosphine, in which the ZnSeS inner-shell layer is formed via temperature-gradient solution growth from 240 to 280 °C. The synthesized green QDs have a high photoluminescence quantum yield (PLQY) of 91% and full width at half-maximum (fwhm) of 36 nm. Moreover, the resultant quantum dot light-emitting devices (QLEDs) also show a narrow fwhm of 42 nm, which is the narrowest emission of green InP QLEDs based on a safe phosphorus source reported so far. Further modulation of the electron injection into the device by inserting a thin layer of lithium fluoride results in a peak external quantum efficiency of 5.56%.

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