nn7b02253_si_001.pdf (705.27 kB)
Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating
journal contribution
posted on 2017-07-07, 00:00 authored by Wenjing Jie, Zhibin Yang, Fan Zhang, Gongxun Bai, Chi Wah Leung, Jianhua HaoRoom-temperature
magnetoresistance (MR) effect is observed in heterostructures
of wafer-scale MoS2 layers and ferromagnetic dielectric
CoFe2O4 (CFO) thin films. Through the ferromagnetic
gating, an MR ratio of −12.7% is experimentally achieved in
monolayer MoS2 under 90 kOe magnetic field at room temperature
(RT). The observed MR ratio is much higher than that in previously
reported nonmagnetic metal coupled with ferromagnetic insulator, which
generally exhibited MR ratio of less than 1%. The enhanced MR is attributed
to the spin accumulation at the heterostructure interface and spin
injection to the MoS2 layers by the strong spin–orbit
coupling effect. The injected spin can contribute to the spin current
and give rise to the MR by changing the resistance of MoS2 layers. Furthermore, the MR effect decreases as the thickness of
MoS2 increases, and the MR ratio becomes negligible in
MoS2 with thickness more than 10 layers. Besides, it is
interesting to find a magnetic field direction dependent spin Hall
magnetoresistance that stems from a combination of the spin Hall and
the inverse spin Hall effects. Our research provides an insight into
exploring RT MR in monolayer materials, which should be helpful for
developing ultrathin magnetic storage devices in the atomically thin
limit.