The
valley pseudospin in monolayer transition metal dichalcogenides
(TMDs) has been proposed as a new way to manipulate information in
various optoelectronic devices. This relies on a large valley polarization
that remains stable over long time scales (hundreds of nanoseconds).
However, time-resolved measurements report valley lifetimes of only
a few picoseconds. This has been attributed to mechanisms such as
phonon-mediated intervalley scattering and a precession of the valley
pseudospin through electron–hole exchange. Here we use transient
spin grating to directly measure the valley depolarization lifetime
in monolayer MoSe2. We find a fast valley decay rate that
scales linearly with the excitation density at different temperatures.
This establishes the presence of strong exciton–exciton Coulomb
exchange interactions enhancing the valley depolarization. Our work
highlights the microscopic processes inhibiting the efficient use
of the exciton valley pseudospin in monolayer TMDs.