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Nonlithographic Fabrication of Crystalline Silicon Nanodots on Graphene

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journal contribution
posted on 12.01.2012, 00:00 by Guo’an Tai, Kai Wang, Zhenhua Sun, Jun Yin, Sheung Mei Ng, Jianxin Zhou, Feng Yan, Chi Wah Leung, Kin Hung Wong, Wanlin Guo, Shu Ping Lau
We report a nonlithographic fabrication method to grow uniform and large-scale crystalline silicon (Si) nanodot (c-SiNDs) arrays on single-layer graphene by an ultrathin anodic porous alumina template and Ni-induced Si crystallization technique. The lateral height of the template can be as thin as 160 nm and the crystallization of Si can be achieved at a low temperature of 400 °C. The effects of c-SiNDs on graphene were studied by Raman spectroscopy. Furthermore, the c-SiNDs/graphene based field effect transistors were demonstrated.

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