posted on 2014-05-14, 00:00authored byKwang
Hoon Lee, Jinwoo Oh, Jeong Gon Son, Heesuk Kim, Sang-Soo Lee
Using
simple microwave irradiation under the presence of sodium
amide as a nitrogen source, preparation of nitrogen-doped graphene
nanosheets has been successfully demonstrated. It is notable that
exfoliation and nitrogen doping of graphite to nitrogen-doped graphene
simultaneously occurred during the microwave irradiation within a
minute, and nitrogen content of the doped graphene could reach up
to 8.1%. It was also found that the binding configuration of nitrogen
atom on graphitic layer consisted of various nitrogen-containing moieties
such as pyridine-N, pyrrolic-N, and quaternary-N, and their composition
was changed as a function of irradiation power. Although formation
of undoped reduced graphene oxide by microwave irradiation resulted
in slight increase of electrical conductivity because of the reductive
recovery of oxidized graphite to graphene, nitrogen doping involved
during irradiation induced much more notable increase of electrical
conductivity more than 300 S cm–1. Furthermore,
nitrogen-doped graphene showed highly enhanced capacitive performance
than that of undoped reduced graphene oxide, the specific capacitance
of 200 F/g (current density of 0.5 A/g), which ascribes the pseudocapacitive
effect from the incorporation of nitrogen atom on graphitic layer.