Nitrogen-Doped WO₃ Nanoparticles as Electrode Materials in All-in-One Supercapacitor Devices

The effect of the annealing temperature on 1% nitrogen-doped WO₃ materials was studied, which were then used as electrode materials for high-performance supercapacitor (SC) devices. The supercapacitive performance of the proposed materials was strongly influenced by the doping element and the annealing temperature by directly changing the defect structure of the host material. The 1% N-doped WO₃ materials annealed at different temperatures were thoroughly characterized through various characterization techniques, including electron paramagnetic resonance and photoluminescence spectroscopy, giving insight into the effect of N-doping on the defect structure and optical properties of WO₃. When the WO₃:N materials were used as electrode material in symmetric SCs, the doping element and the annealing temperature improved the electrochemical performance. No booster materials (such as carbon black) were used in the symmetric SC designs, showing increased specific capacitance (102 F/g) and energy density (14.6 W h/kg) values.