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Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

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journal contribution
posted on 14.01.2015, 00:00 authored by Prokhor A. Alekseev, Mikhail S. Dunaevskiy, Vladimir P. Ulin, Tatiana V. Lvova, Dmitriy O. Filatov, Alexey V. Nezhdanov, Aleksander I. Mashin, Vladimir L. Berkovits
Surface nitridation by hydrazine–sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

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