posted on 2021-03-09, 15:37authored byJiahui Xu, Zhaogang Dong, Mohamed Asbahi, Yiming Wu, Hao Wang, Liangliang Liang, Ray Jia Hong Ng, Hailong Liu, Renaud A. L. Vallée, Joel K. W. Yang, Xiaogang Liu
Efficient
generation of anti-Stokes emission within nanometric
volumes enables the design of ultracompact, miniaturized photonic
devices for a host of applications. Many subwavelength crystals, such
as metal nanoparticles and two-dimensional layered semiconductors,
have been coupled with plasmonic nanostructures for augmented anti-Stokes
luminescence through multiple-harmonic generation. However, their
upconversion process remains inefficient due to their intrinsic low
absorption coefficients. Here, we demonstrate on-chip, site-specific
integration of lanthanide-activated nanocrystals within gold nanotrenches
of sub-25 nm gaps via bottom-up self-assembly. Coupling of upconversion
nanoparticles to subwavelength gap-plasmon modes boosts 3.7-fold spontaneous
emission rates and enhances upconversion by a factor of 100 000.
Numerical investigations reveal that the gap-mode nanocavity confines
incident excitation radiation into nanometric photonic hotspots with
extremely high field intensity, accelerating multiphoton upconversion
processes. The ability to design lateral gap-plasmon modes for enhanced
frequency conversion may hold the potential to develop on-chip, background-free
molecular sensors and low-threshold upconversion lasers.