posted on 2015-05-12, 00:00authored byCarlos Sotelo-Vazquez, Nuruzzaman Noor, Andreas Kafizas, Raul Quesada-Cabrera, David O. Scanlon, Alaric Taylor, James
R. Durrant, Ivan P. Parkin
Multifunctional P-doped TiO2 thin films were synthesized
by atmospheric pressure chemical vapor deposition (APCVD). This is
the first example of P-doped TiO2 films with both P5+ and P3– states, with the relative proportion
being determined by synthesis conditions. This technique to control
the oxidation state of the impurities presents a new approach to achieve
films with both self-cleaning and TCO properties. The origin of electrical
conductivity in these materials was correlated to the incorporation
of P5+ species, as suggested by Hall Effect probe measurements.
The photocatalytic performance of the films was investigated using
the model organic pollutant, stearic acid, with films containing predominately
P3– states found to be vastly inferior photocatalysts
compared to undoped TiO2 films. Transient absorption spectroscopy
studies also showed that charge carrier concentrations increased by
several orders of magnitude in films containing P5+ species
only, whereas photogenerated carrier lifetimesand thus photocatalytic
activitywere severely reduced upon incorporation of P3– species. The results presented here provide important
insights on the influence of dopant nature and location within a semiconductor
structure. These new P-doped TiO2 films are a breakthrough
in the development of multifunctional advanced materials with tuned
properties for a wide range of applications.