An
electrically, magnetically, and temperature controllable two-terminal
nonvolatile memory transistor with a vertical topology has been designed,
fabricated, and demonstrated. This intriguing memory transistor is
composed of a nonvolatile resistive random-access memory (RRAM) of
the layered structure of indium–tin oxide/poly(methyl methacrylate)/Ag
in tandem with a micropyramid-structured magneto-electric film supported
by a 150 μm thick partition. The magneto-electric film is made
of FeNi (or CrO2)/polydimethylsiloxane composite covered
with silver nanowires and can be brought in contact with the top Ag
electrode of the RRAM, forming a magneto-electric device through applying
an appropriate magnetic field strength. The output current of the
proposed device can be regulated when the electric voltage and magnetic
field are active simultaneously, a unique property enabling versatile
functionalities. When using CrO2, the demagnetization property
of CrO2 upon heating allows this device to produce an additional
thermal induction and optically controllable capability. Additionally,
this memory transistor has several outstanding features, including
cost effectiveness, fast response time, touchless control, and mechanical
flexibility. All these characteristics enable to diversify the applications
of our designed nonvolatile memory transistor in several emerging
technologies, including communications, touchless devices, and wearable
electronics.