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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
journal contribution
posted on 2018-10-02, 00:00 authored by Piotr
J. Cegielski, Anna Lena Giesecke, Stefanie Neutzner, Caroline Porschatis, Marina Gandini, Daniel Schall, Carlo A. R. Perini, Jens Bolten, Stephan Suckow, Satender Kataria, Bartos Chmielak, Thorsten Wahlbrink, Annamaria Petrozza, Max C. LemmeMetal-halide
perovskites are promising lasing materials for the
realization of monolithically integrated laser sources, the key components
of silicon photonic integrated circuits (PICs). Perovskites can be
deposited from solution and require only low-temperature processing,
leading to significant cost reduction and enabling new PIC architectures
compared to state-of-the-art lasers realized through the costly and
inefficient hybrid integration of III−V semiconductors. Until
now, however, due to the chemical sensitivity of perovskites, no microfabrication
process based on optical lithography (and, therefore, on existing
semiconductor manufacturing infrastructure) has been established.
Here, the first methylammonium lead iodide perovskite microdisc lasers
monolithically integrated into silicon nitride PICs by such a top-down
process are presented. The lasers show a record low lasing threshold
of 4.7 μJcm–2 at room temperature for monolithically
integrated lasers, which are complementary metal–oxide–semiconductor
compatible and can be integrated in the back-end-of-line processes.
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silicon photoniciodide perovskite microdisc lasersMonolithically Integrated Perovskite Semiconductor Laserslasing materialsScalable Top-Down Fabrication Metal-halide perovskitesIIISilicon Photonic Chipsback-end-of-line processeslasing thresholdmicrofabrication processlasers showchemical sensitivitycost reductiontop-down processPIC architecturesroom temperaturesilicon nitride PICslaser sourcessemiconductor manufacturing infrastructure
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