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Molecular Host−Guest Energy-Transfer System with an Ultralow Amplified Spontaneous Emission Threshold Employing an Ambipolar Semiconducting Host Matrix

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journal contribution
posted on 14.01.2010, 00:00 authored by Stefano Toffanin, Raffaella Capelli, Tsyr-Yuan Hwu, Ken-Tsung Wong, Tobias Plötzing, Michael Först, Michele Muccini
We report on the characteristics of a host−guest lasing system obtained by coevaporation of an oligo(9,9-diarylfluorene) derivative named T3 with the red-emitter 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran dye (DCM). We demonstrate that the ambipolar semiconductor T3 can be implemented as an active matrix in the realization of a host−guest system in which an efficient energy transfer takes place from the T3 matrix to the lasing DCM molecules. We performed a detailed spectroscopic study on the system by systematically varying the DCM concentration in the T3 matrix. Measurements of steady-state photoluminescence (PL), PL quantum yield (PLQY), time-resolved picosecond PL, and amplified spontaneous emission (ASE) threshold are used to optimize the acceptor concentration at which the ASE from DCM molecules takes place with the lowest threshold. The sample with a DCM relative deposition ratio of 2% shows an ASE threshold as low as 0.6 kW/cm2 and a net optical gain measured by femtosecond time-resolved pump-and-probe spectroscopy as high as 77 cm−1. The reference model system Alq3:DCM sample measured in exactly the same experimental conditions presents an one-order-of-magnitude higher ASE threshold. The ASE threshold of T3:DCM is the lowest reported to date for a molecular host−guest energy-transfer system, which makes the investigated blend an appealing system for use as an active layer in lasing devices. In particular, the ambipolar charge transport properties of the T3 matrix and its field-effect characteristics make the host−guest system presented here an ideal candidate for the realization of electrically pumped organic lasers.